Infineon BAS3010A-03WE6327 Schottky Barrier Diode: Datasheet, Specifications, and Application Circuit Design

The Infineon BAS3010A-03WE6327 is a high-performance Schottky barrier diode designed for surface-mount applications requiring low forward voltage and high switching speed. As a critical component in modern power management and RF circuits, its characteristics make it an excellent choice for efficiency-critical designs.

Key Datasheet Specifications

The BAS3010A-03WE6327 is packaged in the compact SOD-323 (SC-76) package, making it suitable for high-density PCB layouts. Its primary electrical characteristics are its defining strength:

Repetitive Peak Reverse Voltage (VRRM): 30 V

Average Forward Current (IF(AV)): 0.2 A

Peak Forward Surge Current (IFSM): 4 A

Forward Voltage (VF): Typically 320 mV at IF = 0.1 A, a remarkably low value that minimizes power loss.

Reverse Leakage Current (IR): 50 µA at 25°C (at VR = 30 V)

Operating Junction Temperature (Tj): -65 °C to +125 °C

A standout feature of this diode is its ultra-low reverse recovery time (trr), which is virtually negligible compared to standard PN-junction diodes. This is a hallmark of Schottky technology and is crucial for minimizing switching losses in high-frequency circuits.

Application Circuit Design

The low VF and fast switching characteristics of the BAS3010A-03WE6327 make it ideal for several key applications:

1. Polarity Protection and Reverse Voltage Clamping:

A primary use is as a reverse polarity protection diode in DC power input stages. Placed in series with the positive supply rail, it prevents damage to sensitive circuitry if the power supply is connected backward. Its low forward voltage ensures a minimal voltage drop, preserving available voltage for the load.

2. High-Frequency Rectification:

In switch-mode power supplies (SMPS), DC-DC converters (especially buck and boost topologies), and RF detectors, the diode's fast switching speed is essential. It is perfectly suited for freewheeling or clamp diode applications in inductive load circuits, where it provides a safe path for current to decay, protecting switching transistors (like MOSFETs) from voltage spikes.

3. OR-ing and Multiplexing Circuits:

In systems with multiple power sources (e.g., a main supply and a battery backup), Schottky diodes like the BAS3010A-03WE6327 can be used to create an OR-ing circuit. This design automatically selects the highest available voltage source while preventing reverse current flow from one source to another, again benefiting from the low VF to maximize efficiency.

Design Considerations:

Thermal Management: While the low VF reduces conduction losses, designers must still calculate power dissipation (P = VF × IF) and ensure the PCB layout provides adequate copper area to dissipate heat, especially when operating near maximum ratings.

Voltage Margin: Always design with a safety margin. For a 12V system, the 30V VRRM provides ample headroom, but for 24V systems, a diode with a higher reverse voltage rating would be necessary.

ICGOODFIND Summary

The Infineon BAS3010A-03WE6327 Schottky diode is a highly efficient and reliable solution for applications demanding minimal voltage drop and ultra-fast switching. Its excellent electrical performance, combined with a compact package, makes it a superior choice for designers optimizing modern power and RF systems for size and efficiency.

Keywords:

Schottky Barrier Diode

Low Forward Voltage

Ultra-Fast Switching

Reverse Polarity Protection

Surface-Mount Device (SMD)