Infineon IPD85P04P4L06ATMA2: A High-Performance 85V P-Channel Power MOSFET

The Infineon IPD85P04P4L06ATMA2 represents a significant advancement in power semiconductor technology, offering engineers a robust and highly efficient solution for a wide array of power management and switching applications. As an 85V P-Channel Power MOSFET, it is specifically engineered to deliver superior performance in space-constrained and thermally challenging environments, making it an ideal choice for modern automotive systems, industrial motor drives, and advanced power supplies.

A key attribute of this MOSFET is its exceptionally low on-state resistance (RDS(on)) of just 4.0 mΩ. This remarkably low value is crucial for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the device enhances overall reliability and can often lead to a simplification of the thermal management system, saving both space and cost. Furthermore, its P-channel configuration offers a distinct advantage in circuit design, particularly for high-side switching. It allows for simpler gate driving circuitry compared to N-channel MOSFETs in similar roles, as it does not require a charge pump or bootstrap circuit to achieve a gate voltage higher than the supply rail. This simplifies design, reduces component count, and improves system reliability.

The device is housed in Infineon’s proprietary SuperSO8 package, which is renowned for its excellent power dissipation capabilities despite its compact footprint. This package technology ensures optimal thermal performance, enabling the MOSFET to handle high continuous and pulsed currents without compromising integrity. The AEC-Q101 qualification further underscores its suitability for the rigorous demands of automotive applications, guaranteeing performance and longevity under extreme temperature fluctuations and harsh operating conditions.

In application, the IPD85P04P4L06ATMA2 excels in DC-DC conversion, load switching, and motor control circuits. Its fast switching speeds and robust body diode make it highly effective in synchronous rectification and in-rush current limiting scenarios, ensuring safe and efficient power delivery.

ICGOODFIND: The Infineon IPD85P04P4L06ATMA2 stands out as a top-tier component, merging high voltage capability, extreme efficiency from ultra-low RDS(on), and automotive-grade robustness in a miniature package, providing designers with a powerful tool to create more efficient and compact electronic systems.

Keywords: P-Channel MOSFET, Low RDS(on), AEC-Q101, SuperSO8, High-Side Switch