Infineon IPD530N15N3: High-Performance 150V OptiMOS Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD530N15N3 stands out as a premier solution, engineered to meet the rigorous demands of modern applications. As part of Infineon’s esteemed OptiMOS™ power transistor family, this 150V N-channel MOSFET is designed to deliver exceptional performance in a compact package.

One of the most striking features of the IPD530N15N3 is its extremely low on-state resistance (RDS(on)) of just 3.0 mΩ maximum. This ultra-low resistance minimizes conduction losses, which is critical for improving overall system efficiency. Whether deployed in synchronous rectification, DC-DC converters, or motor control systems, this transistor ensures that energy wastage is kept to an absolute minimum. The result is not only higher efficiency but also reduced heat generation, contributing to enhanced reliability and longevity of the end product.

Thermal management is another area where the IPD530N15N3 excels. The device is housed in an advanced D2PAK (TO-263) package, optimized for superior thermal conductivity. This allows for effective heat dissipation, enabling the transistor to operate at high currents—up to 180A—without compromising performance. Such robust thermal characteristics make it ideal for high-power applications where heat buildup is a common challenge.

Furthermore, the IPD530N15N3 is characterized by its fast switching capabilities. The low gate charge (Qg) and output capacitance (Coss) ensure rapid turn-on and turn-off times, reducing switching losses significantly. This is particularly beneficial in high-frequency circuits, such as switch-mode power supplies (SMPS) and automotive systems, where switching efficiency directly impacts overall performance.

Infineon has also incorporated advanced silicon technology into this MOSFET, enhancing its avalanche ruggedness and body diode robustness. These features provide an added layer of protection against voltage spikes and reverse recovery events, ensuring dependable operation even under stressful conditions.

ICGOOODFIND: The Infineon IPD530N15N3 OptiMOS power transistor sets a high benchmark with its ultra-low RDS(on), excellent thermal performance, and fast switching characteristics. It is an optimal choice for designers seeking to maximize efficiency and reliability in high-power applications.

Keywords:

OptiMOS, Low RDS(on), High Efficiency, Thermal Performance, Fast Switching