Infineon IPD14N06S280ATMA2: High-Performance N-Channel Power MOSFET for Automotive Applications

The relentless drive towards greater efficiency, reliability, and power density in automotive electronics demands components that are engineered to exceed the rigorous standards of the industry. The Infineon IPD14N06S280ATMA2 stands out as a premier N-Channel power MOSFET specifically designed to meet and surpass these challenges, offering a blend of exceptional switching performance and robust reliability for a wide array of automotive applications.

This MOSFET is built using Infineon's advanced OptiMOS™ technology, which is renowned for its very low typical on-state resistance (R DS(on)) of just 2.8 mΩ. This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. For automotive systems where thermal management is paramount and every watt of power saved contributes to fuel efficiency or extended electric vehicle range, this characteristic is invaluable.

Furthermore, the device is AEC-Q101 qualified, guaranteeing its suitability for the harsh operating environments inherent to automotive use. It can withstand high temperatures, significant thermal cycling, and other stresses that would cause lesser components to fail. This makes it an ideal choice for safety-critical and high-reliability systems such as electronic power steering (EPS), transmission control units (TCU), and advanced braking systems.

The IPD14N06S280ATMA2 also features a low gate charge (Q G ), which enables fast switching speeds. This is essential for high-frequency switching applications like DC-DC converters in infotainment systems, advanced driver-assistance systems (ADAS), and onboard chargers, allowing for more compact and lighter magnetic components and overall system design.

Housed in a PG-TO263-3 (D2PAK) package, the component offers an excellent power-to-volume ratio and superior thermal performance, facilitating efficient heat dissipation away from the silicon die. Its lead-free plating and moisture sensitivity level (MSL 1) further ensure compatibility with modern, eco-conscious manufacturing processes.

ICGOODFIND: In summary, the Infineon IPD14N06S280ATMA2 is a high-performance automotive-grade power MOSFET that delivers outstanding efficiency through its ultra-low R DS(on) , proven reliability through AEC-Q101 qualification, and fast switching capabilities. It is a superior solution for designers aiming to enhance the performance and durability of power electronics in modern vehicles.

Keywords: Automotive-Grade, Low RDS(on), AEC-Q101 Qualified, High Efficiency, OptiMOS™ Technology.